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    Fig. 2.14. The cross section of Silicon surface after annealing at 1000 C in a hydrogen ambient Fig. 2.15. Silicon surface after annealing in hydrogen ambient [C. J. Frosch, 1955] 56 History of Semiconductor Engineering Fig. 2.16. Mesa diffused-base transistor as suggested by Dacey, Lee, and Shockley in March 23, 1955 Fig. 2.17.

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